Numerical design and frequency response of MQW transistor lasers based entirely on group IV alloys

A theoretical model is developed for n–p–n mid-infrared transistor lasers (TLs) with a strain-balanced Ge0.85Sn0.15 multiple quantum well (MQW) structure in their base. The variation of the optical confinement factor, modal gain, and threshold current density rigorously investigated different numbers (N) QWs MQW structure. results show that overall factor gain increase N. frequency response MQWTL common-base (CB) configuration estimated from small-signal relationship between photon emitter by solving laser rate equation continuity equation, considering virtual states as conversion mechanism. Increasing N causes modulation bandwidth first to then decrease This reveals shift nature device higher values also suggest judicious selection will enable proposed become viable monolithic light source.